Chemical Model of Crystal Defect of Acceptor-doped BaPbO3

Chem. J. Chinese Universities

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Chemical Model of Crystal Defect of Acceptor-doped BaPbO₃

LU Yu-Dong^1,2, WANG Xin¹*, ZHUANG Zhi-Qiang¹, LIU Bao-Ling¹

1. Key Lab of Specially Functional Materials, Ministry of Education, College of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China;
2. State Key Laboratory for Reliability Physics and Its Application Technology of Electrical Component, the 5th Electronics Research Institute of the Ministry of Information Industry, Guangzhou 510610, China

Received:2007-01-23 Revised:1900-01-01 Online:2007-10-10 Published:2007-10-10
Contact: WANG Xin

Abstract

Abstract: Since the behavior of undoped BaPbO₃ indicates that it already has an excess of acceptor impurities, acceptor-doped BaPbO₃ merely represents an extension of that behavior. The behavior of undoped and acceptor-doped BaPbO₃ can be divided into three regions: highly oxygen-activity region, the midrange of oxygen-activity, and lower oxygen-activity region. On the basis of the measurement of the equilibrium electrical conductivity with a four-probe dc technique as a function of oxygen pressure(10^-12—10⁵ Pa), the concentration of holes, electrons, oxygen vacancies, lead vacancies, and acceptor impurities were determined. And a defect model for acceptor-doped BaPbO₃, which emphasized the role of holes, electrons, oxygen vacancies, lead vacancies, and acceptor impurities, was presented.

Key words: BaPbO₃, Defect chemistry, Nonstoichiometry, Acceptor

CLC Number:

TrendMD:

LU Yu-Dong^1,2, WANG Xin¹*, ZHUANG Zhi-Qiang¹, LIU Bao-Ling¹. Chemical Model of Crystal Defect of Acceptor-doped BaPbO₃[J]. Chem. J. Chinese Universities, doi: .

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Chemical Model of Crystal Defect of Acceptor-doped BaPbO₃

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