CJCU

Chem. J. Chinese Universities ›› 2011, Vol. 32 ›› Issue (12): 2717.

• Articles • Previous Articles     Next Articles

MOCVD Preparation and Properties of ZnO and Ni\|doped ZnO Films

WANG Hui1,3, WANG Jin1, ZHAO Yang1, ZHAO Long1, ZHAO Wang1, SHI Zhi-Feng1, XIA Xiao-Chuan1, MA Yan1 , DU Guo-Tong1,2, DONG Xin1*   

  1. 1. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China;
    2. School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, China;
    3. College of Physics and Engineering, Henan University of Science and Technology, Luoyang 471003, China
  • Received:2011-08-04 Revised:2011-09-04 Online:2011-12-10 Published:2011-11-25
  • Contact: DONG Xin E-mail:dongx@jlu.edu.cn
  • Supported by:

    国家自然科学基金(批准号: 61006006, 60877020, 60976010)资助.

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Abstract: ZnO and ZnO:Ni films were prepared by metal organic chemical vapor deposition method, and their structure and physical properties were studied. The surface morphologies and crystal structures of the films were analyzed by scanning electron microscope(SEM) and X-ray diffraction(XRD) technique. The results showed that doped Ni can affect the surface morphology and the crystal structure of the ZnO film greatly. The optical characteristic was performed by UV-Vis spectrophotometer. Average transmittance of the ZnO:Ni film was determined to be about 90% in the visible region, which is larger than that(85%)of the undoped ZnO film. The electrical characteristics were performed by Hall system. Resistivity of the ZnO:Ni film was larger than that of the undoped ZnO film. Carrier concentration of the ZnO:Ni film was much less than that of the undoped ZnO film.It was resulted from that Ni reduces the intrinsic donor defect concentration of ZnO film, and this avoids the strong self-compensate effect. Therefore, it is easier to acquire the p-type film by this way.

Key words: ZnO film, ZnO:Ni film, Metal organic chemical vapor deposition(MOCVD), Transmittance

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