CJCU

Chem. J. Chinese Universities ›› 2006, Vol. 27 ›› Issue (1): 104.

• Contents • Previous Articles     Next Articles

Preparation and Forming Mechanism of Porous Film with
Low Dielectric Constant


XU Hong-Yao, WANG Xian-Biao, WU Zhen-Yu   

  1. The Key Laboratory of Environmentfriendly Polymer Materials of Anhui Province, Faculty of Chemistry
    and Chemical Engineering, Anhui University, Hefei 230039, China
  • Received:2005-01-04 Online:2006-01-10 Published:2006-01-10
  • Contact: XU Hong-Yao,E-mail: xuhongy@mail.hf.ah.cn

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Abstract:

AbstractPOSS sol-gel as the porous silica template was prepared by hydrolyzation and condensation of KH-570(γ-methacryloxypropyltrimethoxy silane). Porous film with a low dielectric constant was obtained by calcination of POSS template. The process and mechanism of film formation were investigated by FTIR and its structure was characterized by 29Si NMR, Ellipsometr, N2 adsorptiondesorption and TEM. The results show that the film possesses uniform pore with about 1 nm size, dielectric constant 2.5, and Sbet=384.1 m2/g and the effects of the surface modification reagent and it′s concentration on the dielectric property of film were discussed.

Key words: POSS; Porous film; Low dielectric constant; Rotary coating

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