Chemical Journal of Chinese Universities ›› 2002, Vol. 23 ›› Issue (5): 927-931.

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Growth of ZnO Film by Plasma-assisted MOCVD

WANG Xin-Qiang1, YANG Ru-Sen2, YANG Shu-Ren1, WANG Jin-Zhong1, LI Xian-Jie1, YIN Jing-Zhi1, Ong H. C.3, JIANG Xiu-Ying1, GAO Chun-Xiao2, DU Guo-Tong1   

  1. 1. College of Electronics and Engineering, Jilin University, State Key lab on Integrated Optoelectronics;
    2. State Key Laboratory for Superhard Materials, Jilin University, Changchun 130023, China;
    3. Department of Electronics and Engineering, Hongkong City Univeristy, Hongkong, China
  • Received:2000-10-30 Online:2002-05-24 Published:2002-05-24

Abstract: The growth of ZnO film by plasma-assisted MOCVD was reported in this atricle.From X-ray diffraction spectrum, the intensity of (0002) peak at 2θ=34.56°was high, indicating a c-axis orientation perpendicular to the substrate surface in ZnO.Ultraviolet(UV) emission with a high intensity at 375 nm was attributed to the excitation emission from photoluminescence (PL) spectrum.In PLspectrum, we also found green emission with a low intensity and wide FWHM.This green emission came from deep level transition due to defect levels in ZnO film.The ratio of the intensity of UVemission to that of green emission was as high as 193, indicating a high quality of the samples.This high quality was also confirmed by Atomic Force Microscope (AFM) analysis.Two methods were used in order to get ZnO film with a high resistivity.One was annealing ZnO film every ten minutes under relative high pressure of oxygen (O2) at 700,the other was N-doping by N2.ZnO film with a high resistivity was successfully prepared.The resistivity was 5×104Ω·cm and 1100Ω·cm, respectively, while that of untreated sample was as low as 0.65Ω·cm.Furthermore, N-doped sample had a higher resistivity and better photoluminescence properties than that of the sample obtained by annealing under oxygen.

Key words: ZnO film, Photoluminescence, Atomic force microscope (AFM)

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