Abstract: A RF sputtering was used for preparing cubic boron nitride (c-BN) films. The results from infrared spectra and transmission electron diffraction show that a pure c-BN film with a high crystallinity was obtained. The analyzing of IRspectra indicate that the negative substrate bias is an important condition, and also the reason to form the stress, the higher the bias, the higher the stress. Comparing the reflecting IRabsorption spectra with the transmission IRabsorption spectra, it is first found that the stress on the surface layer of c-BN film is smaller than that in c-BN film. In terms of its compressive stress mode of the growth of c-BN should be limited by a very small stress on the surface layer of c-BN film. A-BN film with the layer-built was specially prepared for investigating the distribution of the stress on the surface layer of c BNfilm. The cracks resulted from the stress of c-BN film were first kept miraculousness. The arrangement of the cracks shows the distribution of the stress on the surface layer of c-BN film at the horizontal direction.

Key words: Cubic boron nitride, Magnetic controlled sputtering, Infrared spectroscopy, Inter-stress