Investigations of Transition States of Porus Silicon

Abstract

Abstract: The surface photovoltaic spectroscopy(SPS)and photoluminescence excitation spectroscopy(PLE)were developed for the investigation of transition states of porous silicons,The results indicate that there is a larger band gap in porous silicon than in bulk crystal silicon.Agroup of bands emerge from the energetic position of 300～500 nm,which are dependent on the feature size of the silicon wires in a porous silicon. This experimental finding is in good agreement with the result of calculation of electronic structure. The evidence strongly supports the model of quantum confinement effect.

Key words: Porous silicon, Photovoltage, Photoluminescence, Electronic structure

TrendMD:

WANG Bao-Hui, WANG De-Jun, LI Tie-Jin. Investigations of Transition States of Porus Silicon[J]. Chem. J. Chinese Universities, 1995, 16(12): 1917.

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Investigations of Transition States of Porus Silicon

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