Chem. J. Chinese Universities ›› 2023, Vol. 44 ›› Issue (10): 20230217.doi: 10.7503/cjcu20230217

• Articles: Inorganic Chemistry • Previous Articles     Next Articles

High-performance Two-dimensional Tungsten Diselenide-based Photodetector

LIU Xiangyu1,2, TANG Jiaqi1,2, TAN Zhifu1, PAN Caofeng1,2()   

  1. 1.Beijing Institute of Nanoenergy and Nanosystems,Chinese Academy of Sciences,Beijing 101400,China
    2.School of Nanoscience and Technology,University of Chinese Academy of Sciences,Beijing 100049,China
  • Received:2023-04-28 Online:2023-10-10 Published:2023-05-22
  • Contact: PAN Caofeng E-mail:pancaofeng@ucas.ac.cn
  • Supported by:
    the National Natural Science Foundation of China(52250398)

Abstract:

Two-dimensional transition-metal dichalcogenides(TMDs) have gained widespread attention in the research field of nano-photodetectors. In this work, two-dimensional tungsten diselenide(WSe2) materials were prepared by physical vapor deposition(PVD). Different conductivity types and better electrical properties were demonstrated by comparison with materials prepared by chemical vapor deposition(CVD) methods. Meanwhile, a pn junction device composed of the same WSe2 material was prepared by using the properties of p-type and n-type conductivity of the materials obtained by two different processes. The test has proved that the device has unidirectional rectification under dark conditions and extremely sensitive response to light, which proves that WSe2 has broad development prospects in the field of optoelectronic device applications.

Key words: Two-dimensional WSe2, Physical vapor deposition, pn Junction, Photodetector

CLC Number: 

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