Synthesis, Electrochromic and Non-volatile Memory Performance of Poly(triarylamine) Containing Functional Quaternary Ammonium Salt†

doi:10.7503/cjcu20150696

Abstract

Abstract:

Two novel poly(triphenylamine) containing functional quaternary ammonium salt(PTP3FQ and PP3FQ) were prepared from two dibromo aromatic compounds, bis(4-bromophenyl) ether and p-dibromobenzene, and 4-(4-aminophenoxy)pyridine via Buchwald-Hartwig coupling reaction, followed by quaterisation reaction with 3-chloromethyl-5-[3-(trifluoromethyl) phenyl]-1,2,4-oxadiazole. The resulting polymers were characterized by ¹H nuclear magnetic resonance(¹H NMR), Fourier transform infrared(FTIR), thermogravimetry analysis(TGA) and cyclic voltammogram. PTP3FQ and PP3FQ not only showed good electrochromic properties withoutadding any electrolyte but also exhibited non-volatile memory performance with a large ON/OFF ratio over 10³ due to the charge transfer between donor triphenylamine and acceptor oxadiazole.

Key words: Triphenylamine polymer, Functional quaternary ammonium salt, Electrochromism, Non-volatile memory

CLC Number:

O631

TrendMD:

LIANG Yu, WANG Benfu, ZHANG Qian, BAI Xuduo, WANG Yanqiu, REN Decai, NIU Haijun. Synthesis, Electrochromic and Non-volatile Memory Performance of Poly(triarylamine) Containing Functional Quaternary Ammonium Salt^†[J]. Chem. J. Chinese Universities, 2016, 37(1): 149.

Figures/Tables 7

Scheme 1 Synthetic routes of PTPTPA, PPTPA, PTP3FQ and PP3FQ

Fig.1 1H NMR spectra of PTPTPA(a) and PPTPA(b) in CDCl3

Fig.2 FTIR spectra of PTPTPA(a), PPTPA(b), PTP3FQ(c) and PP3FQ(d)

Fig.3 TGA curves of PTPTPA(a), PPTPA(b), PTP3FQ(c) and PP3FQ(d) with a heating rate of 10 ℃/min in nitrogen

Fig.4 Cyclic voltammograms of PTPTPA(A), PPTPA(B), PTP3FQ(C) and PP3FQ(D) at scan rate of 50 mV/s in 0.1 mol/L TBAP/CH3CN electrolyte(A, B) and CH3CN solution(C, D)^ Inset: solution color change.

Fig.5 Chemical structures and memory device diagram(A) and I-V curves of PTP3FQ(C) and PP3FQ(B)

Fig.6 Retention characteristics of both ON and OFF state for the ITO/PTP3FQ/Al(A) and ITO/PP3FQ/Al(B) device under a constant stress(-1.0 V) at room temperature

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