高等学校化学学报

高等学校化学学报

• 研究论文 • 上一篇    下一篇

受主掺杂BaPbO3晶体的缺陷化学模型

陆裕东1,2, 王歆1, 庄志强1, 刘保岭1   

    1. 华南理工大学材料与工程学院, 特种功能材料教育部重点实验室, 广州 510640;
    2. 信息产业部电子第五研究所, 电子元器件可靠性物理及其应用技术国家重点实验室, 广州 510610
  • 收稿日期:2007-01-23 修回日期:1900-01-01 出版日期:2007-10-10 发布日期:2007-10-10
  • 通讯作者: 王歆

Chemical Model of Crystal Defect of Acceptor-doped BaPbO3

LU Yu-Dong1,2, WANG Xin1*, ZHUANG Zhi-Qiang1, LIU Bao-Ling1   

    1. Key Lab of Specially Functional Materials, Ministry of Education, College of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China;
    2. State Key Laboratory for Reliability Physics and Its Application Technology of Electrical Component, the 5th Electronics Research Institute of the Ministry of Information Industry, Guangzhou 510610, China
  • Received:2007-01-23 Revised:1900-01-01 Online:2007-10-10 Published:2007-10-10
  • Contact: WANG Xin

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摘要： 以高温平衡电导法测定高温平衡电导率随氧分压的变化为基础, 具体分析了不同氧分压范围内主要缺陷类型——包括空穴、电子、氧离子空位、铅离子空位和杂质缺陷随氧分压的变化规律, 通过一定的理论假设, 建立了以空穴、电子、氧离子空位、铅离子空位和杂质缺陷为主要缺陷类型的受主掺杂BaPbO3材料的缺陷化学模型.

关键词: 铅酸钡, 缺陷化学, 非化学计量比, 受主

Abstract: Since the behavior of undoped BaPbO3 indicates that it already has an excess of acceptor impurities, acceptor-doped BaPbO3 merely represents an extension of that behavior. The behavior of undoped and acceptor-doped BaPbO3 can be divided into three regions: highly oxygen-activity region, the midrange of oxygen-activity, and lower oxygen-activity region. On the basis of the measurement of the equilibrium electrical conductivity with a four-probe dc technique as a function of oxygen pressure(10-12—105 Pa), the concentration of holes, electrons, oxygen vacancies, lead vacancies, and acceptor impurities were determined. And a defect model for acceptor-doped BaPbO3, which emphasized the role of holes, electrons, oxygen vacancies, lead vacancies, and acceptor impurities, was presented.

Key words: BaPbO3, Defect chemistry, Nonstoichiometry, Acceptor

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