Cu12Sb4S13量子点的光照增强阻变性能

doi:10.7503/cjcu20200166

高等学校化学学报 ›› 2020, Vol. 41 ›› Issue (8): 1908.doi: 10.7503/cjcu20200166

• 材料化学 • 上一篇

Cu₁₂Sb₄S₁₃量子点的光照增强阻变性能

王志青, 陈彬彬, 沈杰, 陈文, 刘曰利, 龚少康, 周静

武汉理工大学材料科学与工程学院, 武汉 430070

收稿日期:2020-03-25 出版日期:2020-08-10 发布日期:2020-05-03
通讯作者: 周静,女,博士,教授,主要从事信息功能材料和器件研究.E-mail:zhoujing@whut.edu.cn E-mail:zhoujing@whut.edu.cn
基金资助:
国家自然科学基金（批准号：51572205，11674258，51802093）、教育部装备预研联合基金（批准号：6141A02022262）和武汉理工大学研究生优秀学位论文培育项目（批准号：2018-YS-001）资助.

Light Assisted Resistive Switching Characteristics of Cu₁₂Sb₄S₁₃ Quantum Dots

WANG Zhiqing, CHEN Binbin, SHEN Jie, CHEN Wen, LIU Yueli, GONG Shaokang, ZHOU Jing

School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, China

Received:2020-03-25 Online:2020-08-10 Published:2020-05-03
Supported by:
Supported by the National Natural Science Foundation of China(Nos.51572205, 11674258, 51802093), the Joint Fund of Ministry of Education for Equipment Pre-research, China(No.6141A02022262) and the Excellent Dissertation Cultivation Funds of Wuhan University of Technology, China(No.2018-YS-001).

1. ESM to 1908-1916.pdf(300KB)

摘要/Abstract

摘要： 采用热注入法制备了粒径为7.9 nm的Cu₁₂Sb₄S₁₃量子点（CAS QDs），并利用旋涂法在室温下制备了结构为FTO/CAS QDs/Au（其中FTO为导电玻璃）的阻变存储器（RRAM）.在光照条件下，该三明治结构的RRAM呈现典型的双极性阻变开关特征，具有-0.38 V/0.42 V的低工作电压和10⁵的高阻变开关比，并表现出优异的数据保持性和耐久性.在持续工作1.4×10⁶ s和经过10⁴次快速读取后，器件阻变性能变化率小于0.1%.在光照和电场共同作用下，S^2-导电通道的形成与破坏和FTO/CAS QDs界面肖特基势垒高度的调制是FTO/CAS QDs/Au在高阻态与低阻态之间转变的原因.

关键词: 光照, 全无机Cu₁₂Sb₄S₁₃量子点, 阻变性能, 阻变存储器

Abstract: In this work, resistive random-access memory(RRAM) device based on Cu₁₂Sb₄S₁₃ quantum dots(CAS QDs) prepared by the hot-injection method was fabricated in a structure of FTO/CAS QDs/Au at room temperature. The sandwich structure memory device shows reproducible and reliable bipolar resistive switching property, low operation voltage(-0.38 V/0.42 V) and high resistance ratio (ON/OFF ratio over 10⁵) with light assisting. The RRAM device also shows high reproducibility and good data retention ability. The resis-tance of the device stays constant after 10⁴ cycles of quick read testing and state holding for 1.4×10⁶ s, the change rate of the ON/OFF ratio is smaller than 0.1%. It is suggested that the connections/ruptures of conducting filaments formed by S vacancies and Schottky barrier height at the interface between the FTO electrode and the CAS QDs layer under an electric field and light irradiation are responsible for the resistive switching effect. This work is beneficial to understanding the resistive switching characteristics of the CAS QDs based RRAM devices, facilitating the application of next-generation nonvolatile memory.

Key words: Light irradiation, All inorganic Cu₁₂Sb₄S₁₃ quantum dot, Resistive switching characteristics, Resistive random-access memory(RRAM) device

中图分类号:

O614

TrendMD:

王志青, 陈彬彬, 沈杰, 陈文, 刘曰利, 龚少康, 周静. Cu₁₂Sb₄S₁₃量子点的光照增强阻变性能. 高等学校化学学报, 2020, 41(8): 1908.

WANG Zhiqing, CHEN Binbin, SHEN Jie, CHEN Wen, LIU Yueli, GONG Shaokang, ZHOU Jing. Light Assisted Resistive Switching Characteristics of Cu₁₂Sb₄S₁₃ Quantum Dots. Chem. J. Chinese Universities, 2020, 41(8): 1908.

参考文献 31

[1]	Meena J. S., Sze S. M., Chand U., Tseng T. Y., Nanoscale Res. Lett., 2014, 9(526), 1-33
[2]	Pan F., Gao S., Chen C., Song C., Zeng F., Mater. Sci. Eng. R-Rep., 2014, 83, 1-59
[3]	Ghoneim M., Hussain M., Electronics, 2015, 4, 424-479
[4]	Yang J. J. S., Strukov D. B., Stewart D. R., Nat. Nanotechnol., 2013, 8, 13-24
[5]	Zhang M., Liu H., Chem. J. Chinese Universities, 2020, 41(3), 401-410(张敏, 刘欢. 高等学校化学学报, 2020, 41(3), 401-410
[6]	Zhang D. L., Li W. W., Wang X. B., Sun K., Chem. J. Chinese Universities, 2012, 33(7), 1383-1388(张德龙, 李万万, 王解兵, 孙康. 高等学校化学学报, 2012, 33(7), 1383-1388
[7]	Kagan C. R., Lifshitz E., Sargent E. H., Talapin D. V., Science, 2016, 353, aac5523, 1-9
[8]	Banerjee W., Liu Q., Long S., Lv H., Liu M., J. Phys. D, Appl. Phys., 2017, 50(30), 303002
[9]	Wang Y., Li X. M., Song J. Z., Xiao L., Zeng H. B., Sun H. D., Adv. Mater., 2015, 27, 7101-7108
[10]	Perumalveeramalai C., Li F., Guo T., Kim T. W., IEEE Electron. Device Lett., 2019, 40, 1088-1091
[11]	Pan X., Skafidas E., Nanoscale, 2016, 8, 20074-20079
[12]	Wang D., Ji F., Chen X., Li Y., Ding B., Zhang Y., Appl. Phys. Lett., 2017, 110, 093501
[13]	Zhang X., Xie H., Liu Z., Tan C., Luo Z., Li H., Lin J., Sun L., Chen W., Xu Z., Xie L., Huang W., Zhang H., Angew. Chem. Int. Ed., 2015, 54, 3653-3657
[14]	Mao H. W., Gu C., Yan S. Q., Xin Q., Cheng S., Tan P., Wang X. J., Xiu F., Liu X. Q., Liu J. Q., Huang W., Sun L. B., Adv. Electron. Mater., 2020, 6, 1900493
[15]	Wang Y., Lv Z., Liao Q., Shan H., Chen J., Zhou Y., Zhou L., Chen X., Roy V. A. L., Wang Z., Xu Z., Zeng Y. J., Han S. T., Adv. Mater., 2018, 30, 1800327
[16]	Hwang B., Lee J. S., Adv. Electron. Mater., 2019, 5(1), 1800519
[17]	Han S. T., Hu L., Wang X., Zhou Y., Zeng Y. J., Ruan S., Pan C., Peng Z., Adv. Sci., 2017, 4, 1600435
[18]	Chen Z., Zhang Y., Yu Y., Cao M., Che Y., Jin L., Li Y., Li Q., Li T., Dai H., Yang J., Yao J., Appl. Phys. Lett., 2019, 114, 181103
[19]	Zhou D., Chen F., Han S., Hu W., Zang Z., Hu Z., Li S., Tang X., Ceram. Int., 2018, 44, S152-S155
[20]	Embden J. V., Latham K., Duffy N. W., Tachibana Y., J. Am. Chem. Soc., 2013, 135, 11562-11571
[21]	Ghorpade U. V., Suryawanshi M. P., Shin S. W., Wang X., Jo E., Bae H., Park K., Ha J. S., Kolekar S. S., Kim J. H., J. Mater. Chem. A, 2018, 6, 19798-19809
[22]	Chen K., Zhou J., Chen W., Chen Q., Zhou P., Liu Y., Nanoscale, 2016, 8, 5146-5152
[23]	Ye C., Peng Q., Li M., Luo J., Tang Z., Pei J., Chen J., Shuai Z., Jiang L., Song Y., J. Am. Chem. Soc., 2012, 134(49), 20053-20059
[24]	Zhou F., Liu Y., Shen X., Wang M., Yuan F., Chai Y., Adv. Funct. Mater., 2018, 28(15), 1800080
[25]	Wang Y., Lv Z., Chen J., Wang Z., Zhou Y., Zhou L., Chen X., Han S. T., Adv. Mater., 2018, 30(38), 1802883
[26]	Zhu X. J., Lee S. H., Lu W. D., Adv. Electron. Mater., 2019, 5(9), 1800854
[27]	Xia Y., He W., Chen L., Meng X., Liu Z., Appl. Phys. Lett., 2007, 90, 022907
[28]	Tsai T. L., Chang H. Y., Lou J. J. C., Tseng T. Y., Appl. Phys. Lett., 2016, 108(15), 153505
[29]	Jeong J. S., Topsakal M., Xu P, Jalan B, Wentzcovitch R. M., Mkhoyan A. K., Nano Lett., 2016, 16, 6816-6822
[30]	Waser R., Dittmann R., Staikov G., Szot K., Adv. Mater., 2009, 21(25/26), 2632-2663
[31]	Liu Y., Wang H., Chen K., Yang T., Yang S., Chen W., ACS Appl. Mater. Interfaces, 2019, 11, 9573-9582

Cu₁₂Sb₄S₁₃量子点的光照增强阻变性能

Light Assisted Resistive Switching Characteristics of Cu₁₂Sb₄S₁₃ Quantum Dots

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