还原氧化石墨烯/Au复合微电极阵列的制备及光电特性

doi:10.7503/cjcu20160352

高等学校化学学报 ›› 2016, Vol. 37 ›› Issue (10): 1826.doi: 10.7503/cjcu20160352

还原氧化石墨烯/Au复合微电极阵列的制备及光电特性

季津海, 闻雪梅, 陈洋, 毕宴钢()

吉林大学电子科学与工程学院, 长春 130021

收稿日期:2016-05-18 出版日期:2016-10-10 发布日期:2016-09-23
作者简介:联系人简介: 毕宴钢, 男, 博士, 主要从事有机光电器件结构化电极研究. E-mail:yangang-bi@163.com
基金资助:
国家自然科学基金(批准号: 61322402)资助

Preparation of Reduced-graphene-oxide/Au Composite Microelectrode Array and Its Optical and Electrical Characteristics^†

JI Jinhai, WEN Xuemei, CHEN Yang, BI Yangang^*()

College of Electronic and Engineering, Jilin University, Changchun 130012, China

Received:2016-05-18 Online:2016-10-10 Published:2016-09-23
Contact: BI Yangang E-mail:yangang-bi@163.com
Supported by:
† Supported by the National Natural Science Foundation of China(No.61322402)

摘要/Abstract

摘要：

利用双光束干涉-无掩模光刻技术制备了周期性氧化石墨烯微结构阵列, 利用肼蒸气对氧化石墨烯脱氧还原, 然后蒸镀超薄Au薄膜制备了还原氧化石墨烯/Au复合微电极阵列(R-GO/Au). 对复合电极在可见光波段的透过率和表面电阻进行了表征, 结果表明, R-GO/Au复合微电极阵列具有良好的光电特性. 将R-GO/Au复合微电极阵列引入到有机太阳电池中作为半透明阳极, 器件的光电转化效率可达3.43%.

关键词: 还原氧化石墨烯/Au复合电极, 微电极阵列, 双光束干涉-无掩模光刻技术, 肼蒸气还原

Abstract:

The reduced-graphene-oxide/Au(R-GO/Au) composite microelectrode array was fabricated by a simple method. The graphene oxide(GO) array was prepared by two beam interference-holographic lithography technique, and then reduced by hydrazine vapor to partially remove the oxygen-containing groups. Ultrathin Au film was deposited on the reduced-graphene-oxide(R-GO) array to improve its conductivity. The results indicate that R-GO/Au composite microelectrode array exhibits excellent surface morphology with precisely controlled period and high resolution, good transparency in visible light region and high conductivity. The organic photovoltaic device based on the R-GO/Au composite microelectrode array exhibits a high power conversion efficiency of 3.43%.

Key words: Reduced-graphene-oxide/Au composite electrode, Microelectrode array, Two beam interference-holographic lithography technique, Hydrazine vapor reduction

中图分类号:

O646

TrendMD:

季津海, 闻雪梅, 陈洋, 毕宴钢. 还原氧化石墨烯/Au复合微电极阵列的制备及光电特性. 高等学校化学学报, 2016, 37(10): 1826.

JI Jinhai, WEN Xuemei, CHEN Yang, BI Yangang. Preparation of Reduced-graphene-oxide/Au Composite Microelectrode Array and Its Optical and Electrical Characteristics^†. Chem. J. Chinese Universities, 2016, 37(10): 1826.

图/表 5

Fig.1 Schematic diagram of the process steps for fabrication of the R-GO/Au composite microelectrode array(A), AFM images of the surface of R-GO/Au composite microelectrode array(B, C), height profile of R-GO/Au composite microelectrode array(D) and SEM images of R-GO/Au composite microelectrode array(E)

Fig.2 C1s XPS spectra of GO(A) and R-GO(B)

Fig.3 Transmittance spectra of the GO and R-GO films(A), Au films(B) with different thickness, R-GO/Au films with different thickness of Au and R-GO(C—E) and transmittance of Au and R-GO/Au films at 550 nm(F)(A) a. GO(10 nm); b. GO(15 nm); c. GO(20 nm); d. R-GO(10 nm); e. R-GO(15 nm); f. R-GO(20 nm). (B)—(E) Au(x nm): a. x=1; b. x=2; c. x=3; d. x=4; e. x=5; f. x=6; g. x=7; h. x=8. (F) a. Au; b. R-GO(10 nm)/Au; c. R-GO(15 nm)/Au; d. R-GO(20 nm)/Au.

Fig.4 Sheet resistance of Au and R-GO/Au films with different thickness of Au(A) and relationship between sheet resistance and transmittance at 550 nm of the R-GO/Au films(B)

Fig.5 Schematic structure(A) and j-v curve(B) of OPVs based on the R-GO/Au microelectrode array anode

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还原氧化石墨烯/Au复合微电极阵列的制备及光电特性

Preparation of Reduced-graphene-oxide/Au Composite Microelectrode Array and Its Optical and Electrical Characteristics^†

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还原氧化石墨烯/Au复合微电极阵列的制备及光电特性

Preparation of Reduced-graphene-oxide/Au Composite Microelectrode Array and Its Optical and Electrical Characteristics†

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Preparation of Reduced-graphene-oxide/Au Composite Microelectrode Array and Its Optical and Electrical Characteristics^†