高等学校化学学报

高等学校化学学报 ›› 2000, Vol. 21 ›› Issue (S1): 378.

• Chemistry in Surface Science • 上一篇    下一篇

Ultra-clean Si(111) and Si(001) Surfaces Prepared by Advanced Wet Chemical Cleaning

YE J.H.1, LI Jing1,2, BOK T.H.2, PAN J.S.1, LIS.F.Y.2   

  1. 1. Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602, Republic of Singapore;
    2. Department of Chemistry, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260, Republic of Singapore
  • 出版日期:2000-12-31 发布日期:2000-12-31
  • 通讯作者: YE J.H. E-mail:jh-ye@imre.org.sg

Ultra-clean Si(111) and Si(001) Surfaces Prepared by Advanced Wet Chemical Cleaning

YE J.H.1, LI Jing1,2, BOK T.H.2, PAN J.S.1, LIS.F.Y.2   

  1. 1. Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602, Republic of Singapore;
    2. Department of Chemistry, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260, Republic of Singapore
  • Online:2000-12-31 Published:2000-12-31
  • Contact: YE J.H. E-mail:jh-ye@imre.org.sg

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摘要：

Wet chemical cleaning of silicon is a critical step, e.g., pre-gate clean, in the semiconductor manufacturing[1]. For example, pre-gate oxide cleaning demands ultra-clean silicon surface with least surface roughness. It is well known that metallic infinities and roughness cause the lower breakdown voltage in gate dielectric[2]. It has stringent requirements for ultra-clean and atomically flat silicon surface as the thickness of gate oxide is decreasing. In the present work, we have extended our study on Si(100) surface13] and extensively investigated wet chemical cleaning of Si(111) and Si(100) surfaces in NH4F-based solutions by using scanning tunneling microscopy (STM), attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR), X-ray photoelectron spectroscopy (XPS) and total reflection X-ray fluorescence spectrometry (TXRF). Surface roughness, organic contamination, metallic impurities and surface termination on the silicon surfaces after wet chemical cleaning with various NH4F-based solutions have been determined and compared with those treated with RCA cleans, HF solutions and other industrially used solutions. Our results indicate that ultra-clean and smooth Si(111) and Si(001) surfaces are obtained by treatment with NH4F-based solutions.

Abstract:

Wet chemical cleaning of silicon is a critical step, e.g., pre-gate clean, in the semiconductor manufacturing[1]. For example, pre-gate oxide cleaning demands ultra-clean silicon surface with least surface roughness. It is well known that metallic infinities and roughness cause the lower breakdown voltage in gate dielectric[2]. It has stringent requirements for ultra-clean and atomically flat silicon surface as the thickness of gate oxide is decreasing. In the present work, we have extended our study on Si(100) surface13] and extensively investigated wet chemical cleaning of Si(111) and Si(100) surfaces in NH4F-based solutions by using scanning tunneling microscopy (STM), attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR), X-ray photoelectron spectroscopy (XPS) and total reflection X-ray fluorescence spectrometry (TXRF). Surface roughness, organic contamination, metallic impurities and surface termination on the silicon surfaces after wet chemical cleaning with various NH4F-based solutions have been determined and compared with those treated with RCA cleans, HF solutions and other industrially used solutions. Our results indicate that ultra-clean and smooth Si(111) and Si(001) surfaces are obtained by treatment with NH4F-based solutions.

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