高等学校化学学报

高等学校化学学报 ›› 2000, Vol. 21 ›› Issue (S1): 291.

• Chemistry in Materials Sciences • 上一篇    下一篇

Effects of Ultraviolet Illumination and Pre-treatments on Porous Silicon Formation

LUO Guang-Feng, CHENG Xuan, LIU Feng-Ming, LIN Chang-Jian, TIAN Zhong-Qun, XUE Ru   

  1. Department of Chemistry, State Key Laboratory for Physical Chemistry of Solid Surfaces, Center of Analyses and Measurements, Xiamen University, Xiamen 361005
  • 出版日期:2000-12-31 发布日期:2000-12-31
  • 通讯作者: CHENG Xuan
  • 基金资助:

    This work was supported in part by scientific research foundation for returned overseas Chinese scholars from the state ministry of education of China.

Effects of Ultraviolet Illumination and Pre-treatments on Porous Silicon Formation

LUO Guang-Feng, CHENG Xuan, LIU Feng-Ming, LIN Chang-Jian, TIAN Zhong-Qun, XUE Ru   

  1. Department of Chemistry, State Key Laboratory for Physical Chemistry of Solid Surfaces, Center of Analyses and Measurements, Xiamen University, Xiamen 361005
  • Online:2000-12-31 Published:2000-12-31
  • Contact: CHENG Xuan
  • Supported by:

    This work was supported in part by scientific research foundation for returned overseas Chinese scholars from the state ministry of education of China.

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摘要：

Although porous silicon is readily formed by anodizing silicon wafers in HF-based solutions, its application in silicon-based optoelectronic devices is greatly limited due to its poor stability and low luminescence yield. It is well recognized that the nature of silicon wafers and the fabrication condition parameters significantly influence uniformity, stability and optical properties of porous silicon. In this work, the ultraviolet illumination and pre-treatments were investigated for porous silicon formation. The surface morphologies and optical properties of the samples were also studied.

Abstract:

Although porous silicon is readily formed by anodizing silicon wafers in HF-based solutions, its application in silicon-based optoelectronic devices is greatly limited due to its poor stability and low luminescence yield. It is well recognized that the nature of silicon wafers and the fabrication condition parameters significantly influence uniformity, stability and optical properties of porous silicon. In this work, the ultraviolet illumination and pre-treatments were investigated for porous silicon formation. The surface morphologies and optical properties of the samples were also studied.

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