Anodic Oxide Film In2O3 (Ⅰ)——Preparation and Electronic Properties of the Film

Chem. J. Chinese Universities ›› 1993, Vol. 14 ›› Issue (7): 978.

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Anodic Oxide Film In₂O₃ (Ⅰ)——Preparation and Electronic Properties of the Film

LIN Zhong-Hua, LUO Jin, CHEN Hai-Yi, TIAN Zhao-Wu

Department of Chemistry, Institute of Physical Chemistry, Xiamen University, Xiamen, 361005

Received:1992-09-22 Revised:1993-03-18 Online:1993-07-24 Published:1993-07-24

Abstract

Abstract: The electrode reactions of indium in alkaline solution have been studied by using cyclic voltammetry and XPStechnique.The results show that the In₂O₃ film can be obtained by means of the anodic oxidation.The preparation methods were optimized in order to form an In₂O₃ film with high quantum efficiencies for the photoelectrochemical oxygen evolution.The semiconducting properties of the In₂O₃ anodic film and the thermally oxidized In₂O₃ anodic film were investigated through Mott-Schottky plots, photocurrent response and spectra, and electroreflectance spectra.The anodic film possesses the two kinds of donor and the indirect fundamental optical transition (E_g=2.88 eV) which becomes direct (E_g=3.68 eV) after thermally oxidation of the film.

Key words: Indium electrode, Indium oxide film, Photoelectrochemistry

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LIN Zhong-Hua, LUO Jin, CHEN Hai-Yi, TIAN Zhao-Wu. Anodic Oxide Film In₂O₃ (Ⅰ)——Preparation and Electronic Properties of the Film[J]. Chem. J. Chinese Universities, 1993, 14(7): 978.

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Anodic Oxide Film In₂O₃ (Ⅰ)——Preparation and Electronic Properties of the Film

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