Abstract: InAs quantum dots(QDs) have been grown on the GaAs(001)substrates by the method of molecular beam epitaxy.The emission of InAs QDs can be turned to about 1 300 nm by the introduction of a 10ML In_0.4Ga_0.6As layer.The photoluminescence of the samples were studied before and after being treated by(hydrogen) plasma.The results show that the enhancement of the PL intensity after H-plasma treatment(depends) on the excitation power,from about a factor of 12 at the low excitation limit to about a factor of 2 at the highest excitation power used in this study,which are probably due to competition between carrier capture by nonradiative centers and InAs QDs.PL intensity variation with the chauge of time and temperature were also investigated,and the results of them clearly illustrate that there indeed exist interface defects,both on the interface(between) the InAs dots and surrounding layers and in the GaAs layers,which can be suppressed heavily by H-treatments so that the PL intensity can be enhanced greatly.

Key words: InAs quantum dots, Interface defects, Photoluminescence