Photoelectric Properties of Zr0.5Ti0.5O2 Nano Thin Films

Chem. J. Chinese Universities ›› 2011, Vol. 32 ›› Issue (8): 1785.

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Photoelectric Properties of Zr0.5Ti0.5O2 Nano Thin Films

ZHANG Hai-Feng, ZHANG Min, RUAN Sheng-Ping, MENG Fan-Xu, Feng Cai-Hui, XU Yang, CHEN Wei-You, ZHANG Xin-Dong*

State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China

Received:2011-06-01 Revised:2011-06-27 Online:2011-08-10 Published:2011-07-19
Contact: ZHANG Xin-Dong E-mail:xindong@jlu.edu.cn
Supported by:
国家自然科学基金(批准号： 60977031, 50977038)资助.

Abstract

Abstract: Zr0.5Ti0.5O2 thin films were prepared by a sol-gel method and characterized by means of XRD, SEM, XPS and UV-visible absorption spectra. XPS analysis indicated that the atom ratio between Zr and Ti is 1:1. SEM shows that the surface of Zr0.5Ti0.5O2 film is flat and not chapped, which is better than that of pure ZrO2 and TiO2 film. In addition, the film’s abortion edge shows obvious blue shift with the Zr doping. Based on the Zr0.5Ti0.5O2 thin film, planar interdigitated electrodes were prepared and then tested. At 5 V bias, the sample was insensitive to visible light but exhibit significant response under the irradiation of 260 nm UV light.

Key words: Sol-gel method, ZrxTi1-xO2 nano thin film, Photoelectric property

CLC Number:

O472+.3

TrendMD:

ZHANG Hai-Feng, ZHANG Min, RUAN Sheng-Ping, MENG Fan-Xu, Feng Cai-Hui, XU Yang, CHEN Wei-You, ZHANG Xin-Dong*. Photoelectric Properties of Zr0.5Ti0.5O2 Nano Thin Films[J]. Chem. J. Chinese Universities, 2011, 32(8): 1785.

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Photoelectric Properties of Zr0.5Ti0.5O2 Nano Thin Films

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