Abstract: The supported coupledsemiconductor of NiO-MoO₃/SiO₂ was prepared by surface modification method. TPR, XRD, Raman, TEM, BET and UV-Vis DRS techniques were used to characterize the structure and light adsorption ability of NiO-MoO₃/SiO₂. The results show that, the particle size of NiO-MoO₃/SiO₂ is about 10 nm, xNiO·MoO₃ coupled oxide exist on the silica surface as crystallite, and NiO and MoO₃ on the support surface can act on each other. On the one hand, NiO can promote the dispersion of MoO₃ on the silica surface, which effectively prevents MoO_x from aggregation and diminishes the size of crystallite, on the other hand, NiO can expand the light absorption ability of the solid material, raise its utilization to the light energy.

Key words: Surface modification method, Coupled semiconductor, Molybdenum trioxide, Nickel oxide, Light adsorption ability