CJCU

Chem. J. Chinese Universities ›› 2011, Vol. 32 ›› Issue (12): 2739.

• Articles • Previous Articles     Next Articles

Preparation and Characterization of Wide-bandgap Cu(In, Al)Se2 Thin Films

HUANG Can-Ling, HU Bin-Bin, WANG Guang-Jun, LI Hong-Wei,  GONG Shi-Jiang, DU Zu-Liang*   

  1. Key Laboratory for Special Functional Materials of Ministry of Education, Henan University, Kaifeng 475004, China
  • Received:2011-04-02 Revised:2011-08-01 Online:2011-12-10 Published:2011-11-25
  • Contact: DU Zu-Liang E-mail:zld@henu.edu.cn
  • Supported by:

    国家自然科学基金(批准号: 100874040)、教育部科技创新工程重大项目培育资金项目(批准号: 708062)和河南省科技创新杰出人才基金(批准号: 114200510015)资助.

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Abstract: The precursor thin films of CuInSe2(CIS) were prepared using a special pulse electrodeposition method and Al was deposited on the CIS thin films through the vacuum evaporation method. The Cu(In, Al)Se2(CIAS) thin films were successfully fabricated by annealing the composite thin films of CIS and Al. The morphology, structure, composition and optical absorbance property of the CIAS thin films were characterized by  SEM, EDS, XRD, XPS and UV-Vis, respectively. The CIAS thin films composed of uniform particles present a chalcopyrite structure, and the surface is smooth and compact. The CIAS thin film has good absorption in the visible region, and the band gap is about 1.65 eV. 

Key words: Special pulse electrodeposition, Vacuum evaporation, CuInSe2 thin film, Cu(In, Al)Se2 thin film

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