Surface Charge Characteristics of n-AlGaN/GaN Heterostructures Films in Nano-scale by Kelvin Probe Force Microscopy in Vacuum

Chem. J. Chinese Universities ›› 2011, Vol. 32 ›› Issue (1): 139.

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Surface Charge Characteristics of n-AlGaN/GaN Heterostructures Films in Nano-scale by Kelvin Probe Force Microscopy in Vacuum

WANG LingLing,YANG WenSheng,WANG DeJun,XIE TengFeng

College of Chemistry, Jilin University, Changchun 130012, China

Received:2010-04-02 Revised:2010-05-05 Online:2011-01-10 Published:2010-12-11
Contact: XIE TengFeng E-mail:xietf@jlu.edu.cn
Supported by:
国家重点基础研究发展计划项目(批准号: 2007CB613303)和国家自然科学基金(批准号: 20703020, 20873053)资助.

Abstract

Abstract: The surface charges characteristics of n-AlGaN/GaN heterostructures films in nano scale have been studied by means of KFM technique in vaccum conditions. The results showed that all the dislocations of n-AlGaN/GaN heterostructures films were negatively charged, and the maxinum contact potential difference was about 590mV. Moreover the contact potential variations around the dislocations in n-AlGaN/GaN heterostructures films was much larger than that of dislocations in diameter. The photo-generated charges rediscontribution has been observed also under illumination. This result indicates that surface charges of semiconductor in nano-scale can be measured quantitatively by KFM in vacuum condition.

Key words: AlGaN/GaN Heterostructures, surface potential, KFM, photo-generated charges transfer

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WANG LingLing YANG WenSheng WANG DeJun XIE TengFeng. Surface Charge Characteristics of n-AlGaN/GaN Heterostructures Films in Nano-scale by Kelvin Probe Force Microscopy in Vacuum[J]. Chem. J. Chinese Universities, 2011, 32(1): 139.

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Surface Charge Characteristics of n-AlGaN/GaN Heterostructures Films in Nano-scale by Kelvin Probe Force Microscopy in Vacuum

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