Chem. J. Chinese Universities ›› 2010, Vol. 31 ›› Issue (6): 1113.

• Articles • Previous Articles     Next Articles

Photoluminescence Properties of ZnO Nanorod Films Prepared by Wet-chemical Method

WEN Yan, WANG Yu-Hua*   

  1. School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China
  • Received:2009-09-30 Online:2010-06-10 Published:2010-06-10
  • Contact: WANG Yu-Hua. E-mail: wyh@lzu.edu.cn
  • Supported by:

    国家自然科学基金(批准号: 10874061)资助.

Abstract:

Pure ZnO nanorod films were fabricated on nonconductive glass substrates by the simple wet-chemical method at 80 ℃. The structures and morphology of as-gown ZnO nanorod films were investigated by X-ray diffraction(XRD) and scanning electron microscopy(SEM). The results show that the nanorod array at the growth time of 30 min is Wurtzite structure and the mean diameter is about 80—90 nm. Besides, the photoluminescence(PL) properties of ZnO nanorod films at different low anneal temperatures as well as different anneal atmospheres are also studied. It is indicated that the ZnO film annealed at 450 ℃ in O2 atmosphere for 1 h shows a stronger visible emission in the range of 550—750 nm with a maximum peak at 650 nm than the films annealed in the air and 5%H2/95%N2 atmosphere, and the broad absorption band of the sample(200—370 nm) is well matched with the emission wavelength of the long-ultraviolet(long-UV) light emitting diodes(LEDs)(λex=350—420 nm).

Key words: ZnO nanorod film; Wet-chemical method; Low temperature anneal; Photoluminescence; Light emitting diode(LED)

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