Chem. J. Chinese Universities ›› 2010, Vol. 31 ›› Issue (3): 452.

• Articles • Previous Articles     Next Articles

Growth and Characterization of InGaAs Quantum Dots with High Density and Long Emission Wavelength

LI Lin*, ZHANG Bin, LI Zhan-Guo, LI Mei, LIU Guo-Jun   

  1. National Key Lab of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China
  • Received:2009-06-01 Online:2010-03-10 Published:2010-03-10
  • Contact: LI Lin. E-mail: lilin@cust.edu.cn
  • Supported by:

    国家自然科学基金(批准号: 60976038)和高功率半导体激光国家重点实验室基金(批准号: 010602)资助.

Abstract:

InAs quantum dots with high-density(~5×1010 cm-2) were fabricated on GaAs substrate by metal-organic chemical-vapor deposition(MOCVD), the growth parameters were studied at room temperature, the ground state peak wavelength of photoluminescence(PL) spectra and full width at Half-Maximum(FWHM) are 1.346 μm and 24 meV, respectively, when the QDs were finally capped with 5 nm InGaAs(12% In content) strain-reducing layer(SRL). The results of PL measurements showed that the InGaAs SRL with higher In content which was fatricated at lower growth temperature could improve the optical quality of InAs QDs with strong red-shift in the spectra.

Key words: InAs quantum dot; 1.3 μm wavelength; Optical property

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