Chem. J. Chinese Universities ›› 2009, Vol. 30 ›› Issue (11(1)): 73.

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Atomistic Simulations of Bauschinger Effect on Silicon Nanowire

MENG Qing-Yuan, JING Yu-Hang*   

  1. Department of Astronautical Science and Mechanics, Harbin Institute of Technology, Harbin 150001
  • Received:2009-07-28 Online:2009-11-30 Published:2009-11-30
  • Contact: JING Yu-Hang. E-mail: jingyuhang@gmail.com
  • Supported by:

    国家自然科学基金(批准号: 10772062)资助.

Abstract:

Molecular dynamics simulations with Stillinger-Weber potential were used to study the Bauschinger effect on a single-crystalline silicon nanowire. In the case of uniaxial loading, the simulation results show that the uniaxial tensile and compressive loading exhibit asymmetry in mechanical property. Compared with those of compressive test, the higher Young's modulus and yield stress are obtained in the tension loading, which can be introduced by the free surface effect. Additionally, the plastic deformation due to tension loading is characterized by {111} slippages and rearrangements of atoms close to the necking region. In consideration of the Bauschinger effect, the compression-followed-by-tension process is applied to the silicon nanowire. It has been found that the reversal yield stress decreases and the Bauschinger effect increases with the increasing of the prestrain.

Key words: Si nanowire; Molecular dynamics; Bauschinger effect

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