Chem. J. Chinese Universities

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Effect of Annealing Temperature on Structure and Gaschromic Properties of WO3 Thin Films

SHI Ji-Chao2, WU Guang-Ming1*, CHEN Shi-Wen1, SHEN Jun1, ZHOU Bin1, NI Xing-Yuan1   

    1. Pohl Institute of Solid State Physics,
    2. Department of Chemistry, Tongji University, Shanghai 200092, China
  • Received:2006-09-26 Revised:1900-01-01 Online:2007-07-10 Published:2007-07-10
  • Contact: WU Guang-Ming

Abstract: WO3 sol(600 mL) was prepared with tungsten powder and 37% H2O2 through the sol-gel method in this paper. WO3 thin films were prepared on silicon chips and ordinary slide glasses via Dip Master method and annealed in ambient air at temperatures of 50, 150, 250, 350 and 450 ℃, respectively. Thickness and refractive index of the WO3 thin films were researched by Spectroscopic Ellipsometer. Surface morphology and microstructure of the films were analyzed with AFM, IR and XRD respectively. The annealing temperature have an important effect on the structure and gaschromic properties of WO3 thin films. At low annealing temperature, WO3 thin films is amorphous and porous structure, and the water of WO3 thin films is appropriate, then this kind of WO3 thin films have a good gaschromic properties.

Key words: WO3 thin Films, WO3 thin Films, Annealing temperature, Annealing temperature, Gaschromic, Gaschromic

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