Abstract: The chemical bonding states and the structure of CN_xfilms grown on Si(001) substrate by using RFmagnetron sputtering were studied at different substrate bias voltages (V_b) The incident ions energy bombarding the substrate surface could be controlled by the substrate negative bias, which would influence the chemical bonding states of CN_xfilms. The results of Raman, FTIR and XPS showed that the nitrogen atoms were bound to sp, sp²and sp³hybridized carbon atoms. The content of sp³C-N increased firstly with the increase of V_b, reached to the maximum value at V_b=- 50 V, and then decreased continually. This trend indicated the content of sp³C-N bonds in the CN_xfilms were closely related to change of ions energy.

Key words: CN_xfilms, Chemical bonding state, sp³C-N bond