Abstract: CN_x thin films were synthesized on Si(001) at different substrate temperatures(t_s=room temperature, 350, 500 ℃) by R.F. magnetron sputtering method, Raman spectroscopy, FTIR spectroscopy and XPSwere used to study the relationship between the chemical binding state of CN_x thin films and temperature. Raman spectra shows that with the increase of t_s, Db and position shifted towards a lower frequency, while Gband position shifted towards a higher frequency. Their full width at half-maximum decreased from 375 and 150 cm^-1 to 328 and 142 cm^-1 respectively, and the ratio of I_D/I_G decreased from 376 to 288 too. Except for disorder Dband(1400 cm^-1) and graphitic Gband(1570 cm^-1), ca . 700, ca . 2210(C≡N), 2330(C-O) and 3255-3351 cm^-1 (N-H) appeared in FTIRspectra. From XPS spectra we can conclude that with the rise of t s, mol ratio of N/Cdecreased from 049 to 038, while the compound ratio of sp²(C-N) to sp³(C-N) had a trend of increasing. Lower annealing temperature(350 ℃) had no significant effects on the chemical binding state of CN_x thin film, but higher annealing temperature(900 ℃) led to the better crystallization degree of the sample.

Key words: CN_x, R.F.magnetron sputtering, Chemical binding state