Chem. J. Chinese Universities ›› 2001, Vol. 22 ›› Issue (7): 1222.

• Articles • Previous Articles     Next Articles

STM Thermochemical Hole Burning Memory——Influence of Pulse Voltage and Duration on Hole Size

LEI Xiao-Jun, CHEN Hai-Feng, LIU Zhong-Fan    

  1. College of Chemistry and Molecular Engineering, Center for Nanoscale Science and Technology, Peking University, Beijing 100871, China
  • Received:2001-01-18 Online:2001-07-24 Published:2001-07-24

Abstract: Recently we reported STM THB(Thermochemical Hole Burning) Data Storage. Here we study the influence of pulse voltage and duration on hole size. It is demonstrated that with the increase of pulse voltage and duration, the hole size increases correspondingly. Furthermore, theoretical analysis was conducted, which was successfully used to interpret our experimental results.

Key words: STM, Data storage, Thermochemical Hole Burning, THB

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