Preparation of Quantum-dot Ge Doped SiO2 Glass by a New Sol-gel Process

Chem. J. Chinese Universities ›› 2001, Vol. 22 ›› Issue (10): 1707.

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Preparation of Quantum-dot Ge Doped SiO₂ Glass by a New Sol-gel Process

YANG He-Qing^1,4, LIU Shou-Xin¹, ZHANG Bang-Lao¹, WANG Xuan ZHANG Liang-Ying², YAO Xi³

1. Department of Chemistry;
2. Department of Physics, Shanxi Normal University, Xi'an 710062, China;
3. Electronic Materialsand Research Laboratory, Xi'an Jiaotong University, Xi'an 710049, China;
4. State Key Laboratory for Applied Surface Physics, Fudan University, Shanghai 200433, China

Received:2000-07-13 Online:2001-10-24 Published:2001-10-24

Abstract

Abstract: Ge nanocrystals embedded in SiO₂ gel-glasses were prepared by a sol-gel method. The gels synthesized through the hydrolysis of a complex solution of Si(OC₂H₅)₄ and Cl₃GeCH₂CH₂COOHwere heated at 600 ℃ in air, and then heated from 500 to 700 ℃ in H₂, in which Ge⁴⁺ ions were reduced to precipitate Ge cubic crystals. However,Ge cubic as well as GeO₂ hexagonal crystals were formed in SiO₂ matrix when n(GeO₂)/n(SiO₂)=0.30. The size of Ge nanocrystals, determined from the line broadening of X-ray diffraction pattern, increases from 1 to 10 nm in diameter with molar ratios of GeO₂/SiO₂ increasing. The Ge nanocrystals were found to be polycrystalline in the SiO₂ gel-glasses by electron diffraction pattern.

Key words: Solgel process, Ge nanocrystals, SiO₂ glass

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YANG He-Qing, LIU Shou-Xin, ZHANG Bang-Lao, WANG Xuan ZHANG Liang-Ying, YAO Xi . Preparation of Quantum-dot Ge Doped SiO₂ Glass by a New Sol-gel Process[J]. Chem. J. Chinese Universities, 2001, 22(10): 1707.

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Preparation of Quantum-dot Ge Doped SiO₂ Glass by a New Sol-gel Process

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