Abstract:

Bi₄Ti₃O₁₂ thin films were prepared by chemical solution deposition technique on n-Si(lOO). Bismuth nitrate and titanium butoxide were used as starting materials. In this paper, we used this technique to prepare Bi₄Ti₃O₁₂ thin films heat treated by both rapid annealing for 30 seconds in a rapid annealing heater and annealing in a furnace for 30 minutes, and found that the heat treat mode greatly influences the properties of the films. The crystallization temperature of the film made from rapid annealing is about 500℃, while that of the film prepared by heating in a furnace is about 550℃. X-ray diffraction pattern of the film heat treated by the former has stronger (004), (006), (008), (0010) peaks than that of the film heat treated by the latter, which suggests that the rapid annealing heat treat mode favors preferential c-oriental film. The grain size of the film obtained by rapid annealing is smaller than that of the film prepared by heating in a furnace. When the films were both annealed at 600℃,the coercive field of the film heat treated by the former is 45 kV/cm, while that of the film heat treated by the latter is 87 kV/cm.