Abstract:

Although porous silicon is readily formed by anodizing silicon wafers in HF-based solutions, its application in silicon-based optoelectronic devices is greatly limited due to its poor stability and low luminescence yield. It is well recognized that the nature of silicon wafers and the fabrication condition parameters significantly influence uniformity, stability and optical properties of porous silicon. In this work, the ultraviolet illumination and pre-treatments were investigated for porous silicon formation. The surface morphologies and optical properties of the samples were also studied.