Chem. J. Chinese Universities ›› 1994, Vol. 15 ›› Issue (6): 907.

• Articles • Previous Articles     Next Articles

Ab Initio Molecular Orbital Study of Bonding Trends in 4m System(X=H,He,Li,Be, O,F,Ne,Na,Mg,S,Cl,Ar;m=0,±4)

ZHAO Yong-Fang, YU Wen   

  1. Institute of Atomic and Molecular Physics, Jilin University, Changchun, 130023
  • Received:1993-06-05 Revised:1994-03-26 Online:1994-06-24 Published:1994-06-24

Abstract: Bonding trends in SiX4m system are studied using the methods of ab initio molecular orbital at HF/STO-3G, HP/3-21Gand HF/6-31Glevels.The calculated results indicate that all species considered except SiLi4 have local minima.Comparing with experimentally known molecules SiH4, SiF4 and SiCl4, the species SiHe44+, SiNe44+, and SiAr44+ containing rare gas, isoelectronic structure with previous molecules, respectively, have larger probability of bonding trends than species containing alkali metals Li and Na, alkali-earth metal Be and Mg.It could be expected that SiHe44+, SiNe44+ and SiAr44+ could be candidates of probably stable new molecules.

Key words: Small silicon compounds, Ab initio molecular orbitals, Molecular bonding trends

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