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Chem. J. Chinese Universities ›› 1994, Vol. 15 ›› Issue (5): 711.

• Articles • Previous Articles     Next Articles

Studies on the Properties of Light-induced Interface Charge Transfer Between Porphyrin Molecule and Modified n-GaAs(100),n-Si(111)

YANG Ji-Hua, ZHANG Jie, GONG Ming-Xuan, WANG De-Jun, SUN Hao-Ran, CAO Xi-Zhang, BAI Yu-Bai, LI Tie-Jie   

  1. Department of Chemistry, Jilin University, Changchun, 130023
  • Received:1993-07-30 Revised:1993-12-10 Online:1994-05-24 Published:1994-05-24

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Abstract: The properties of light-induced interface charge transfer between porphyrin,tetrakis-(4-trimethylaminephenyl)porphyrin tetraiodide(TTMAPPIH2) and modified n-GaAs (100),n-Si(111) were studied by the surface photovoltage spectroscopy(SPS) method.The result suggests that the efficiency of light-induced interface charge transfer between TTMAPPIH2 and n-G3As(100) is much higher than that between TTMAPPIH2 and n-Si (111).The obvious light-induced charge transfer between TTMAPPIH2 and n-GaAs(100) is also found in the no-absorption region of TTMAPPIH2.but it is not found between TTMAPPIH2 and n-Si(111),By using the relative energy level among TTMAPPIH2,nGaAs(100) and n-Si(111) determined by electrochemical measurement and UV-Vis absorption spectrum,the characteristie difference of light-induced interface charge transfer between TTMAPPIH2 and n-GaAs(100),n-Si(111) is explained satisfactorily.

Key words: Tetrakis(4-trimethylaminephenyl)porphyrin tetraiodide(TTMAPPIH2), Organic molecule/semiconductor, Surface photovoltage spectroscopy(SPS)

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