Chem. J. Chinese Universities ›› 1994, Vol. 15 ›› Issue (10): 1543.
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XU Zhu-De, CHEN Wan-Xi, DING Ji-Cheng
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Abstract: IRlaser-assisted SiO2 thin films were grown on the clean surface of Si(100)at a low substrate temperature(from room temperature to about 200℃), using 10.6 μm CW CO2 laser by self-established laser surface reaction device, The influence of different experimental conditions, such as reaction gas percentage, substrate temperature, incident laser intensity, and laser exposure time etc.on SiO2 thin films was investigated.The reaction dynamics of oxidation of IRlaser-assisted SiO2 films was discussed and the idea of reaction inducement period in the thin oxidation area(<30 nm)was suggested.
Key words: Laser micro-chemistry, SiO2 film, Oxidation dynamics
TrendMD:
XU Zhu-De, CHEN Wan-Xi, DING Ji-Cheng. Experimental Study of Oxidation Dynamics of IR Laser-Induced SiO2 Films[J]. Chem. J. Chinese Universities, 1994, 15(10): 1543.
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http://www.cjcu.jlu.edu.cn/EN/Y1994/V15/I10/1543
