Chem. J. Chinese Universities ›› 1986, Vol. 7 ›› Issue (10): 923.

• Articles • Previous Articles     Next Articles

A New Goated Wire Ca2+-Ion Sensitive Field-Effect Transistor

Fu Tingzhi1, Huang Depei1, Zhu Chunsheng1, Ou Huichun1, Lu Yuyi1, Hu Jin2, Zhou Jiarong2, Jin Jie3, Wang Jinhua3, Zhang Guoying4   

  1. 1. Department of Biology and Department of Chemistry, Nanjing University Nanjing;
    2. Taicang Trasisters Factory, Nanjing;
    3. Taihe People's Hospital;
    4. Taicang Television Set Factory, Nanjing
  • Received:1985-04-02 Online:1986-10-24 Published:1986-10-24

Abstract: The authors of this paper have developed a Ca2+-ISFETby dissolving just the right amount of calcium bis-(bis-octylbenzene phosphate)with PVCin a tetrahy-drofuran solution,which was coated on platihun-wire(1.8cm long and φ0.4m/m)after adding to it a plasticizer.

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