Abstract: Studies of n-type GaAs_1-xP_x-based photoelectrocherriical cell using S^2-/Sr_R^2- relectrolyte under the nitrogen atmosphere are reported for values of x (0.15, 0.29, 0.34, 0.40, 0.46, 0.52, 0.59, 0.65).The open circuit photovoltages(V_OC) and the short circuit photocurrent densities(J_SC) were determined under an illumination intensity of 35.2mW/cm².