Abstract: This paper deals with the investigation of the doping growth of GaNby using Ga-HCl-NH₃-H₂-Ar system.The experimental results indicate that the incorporation of Zinc into epitaxial layers and the morphology of the layers are significantly effected by each of deposition parameters,especially by the deposition temperature.It was found that there is a narrow range of temperature (ca.970-1000℃) in which Zinc incorporates abruptly into the epitaxial layers and the layers grown have better quality.In addition an initial test of doping growth with both Zinc and phosphorus as dopants was carried out.The result suggests the value of further rese-(re-search) search on it.The measurement of the impurity distributions in the depth of the layers grown showed the difference in the incorporation behaviours of Zinc and phosphorus.On the basis of these experimental facts the mechanisms of Zinc-doping and crystal growth processes are presented and a desirable procedure for doping epitaxial growth is suggested.