Light Assisted Resistive Switching Characteristics of Cu12Sb4S13 Quantum Dots

doi:10.7503/cjcu20200166

Chem. J. Chinese Universities ›› 2020, Vol. 41 ›› Issue (8): 1908.doi: 10.7503/cjcu20200166

• Material Chemistry • Previous Articles

Light Assisted Resistive Switching Characteristics of Cu₁₂Sb₄S₁₃ Quantum Dots

WANG Zhiqing, CHEN Binbin, SHEN Jie, CHEN Wen, LIU Yueli, GONG Shaokang, ZHOU Jing

School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, China

Received:2020-03-25 Online:2020-08-10 Published:2020-05-03
Supported by:
Supported by the National Natural Science Foundation of China(Nos.51572205, 11674258, 51802093), the Joint Fund of Ministry of Education for Equipment Pre-research, China(No.6141A02022262) and the Excellent Dissertation Cultivation Funds of Wuhan University of Technology, China(No.2018-YS-001).

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Abstract

Abstract: In this work, resistive random-access memory(RRAM) device based on Cu₁₂Sb₄S₁₃ quantum dots(CAS QDs) prepared by the hot-injection method was fabricated in a structure of FTO/CAS QDs/Au at room temperature. The sandwich structure memory device shows reproducible and reliable bipolar resistive switching property, low operation voltage(-0.38 V/0.42 V) and high resistance ratio (ON/OFF ratio over 10⁵) with light assisting. The RRAM device also shows high reproducibility and good data retention ability. The resis-tance of the device stays constant after 10⁴ cycles of quick read testing and state holding for 1.4×10⁶ s, the change rate of the ON/OFF ratio is smaller than 0.1%. It is suggested that the connections/ruptures of conducting filaments formed by S vacancies and Schottky barrier height at the interface between the FTO electrode and the CAS QDs layer under an electric field and light irradiation are responsible for the resistive switching effect. This work is beneficial to understanding the resistive switching characteristics of the CAS QDs based RRAM devices, facilitating the application of next-generation nonvolatile memory.

Key words: Light irradiation, All inorganic Cu₁₂Sb₄S₁₃ quantum dot, Resistive switching characteristics, Resistive random-access memory(RRAM) device

CLC Number:

O614

TrendMD:

WANG Zhiqing, CHEN Binbin, SHEN Jie, CHEN Wen, LIU Yueli, GONG Shaokang, ZHOU Jing. Light Assisted Resistive Switching Characteristics of Cu₁₂Sb₄S₁₃ Quantum Dots[J]. Chem. J. Chinese Universities, 2020, 41(8): 1908.

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Light Assisted Resistive Switching Characteristics of Cu₁₂Sb₄S₁₃ Quantum Dots

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