Chem. J. Chinese Universities ›› 2004, Vol. 25 ›› Issue (11): 2078.

• Articles • Previous Articles     Next Articles

XPS Valence Band of ZnO Films

LI Wan-Cheng, DU Guo-Tong, YANG Xiao-Tian, LIU Bo-Yang, ZHANG Yuan-Tao, ZHAO Bai-Jun, JIANG Xiu-Ying   

  1. State Key Laboratory on Integrated Optoelectronics, College of Electronics Science and Engineering, Jilin University, Changchun 130023, China
  • Received:2003-12-25 Online:2004-11-24 Published:2004-11-24

Abstract: ZnO films are grown by the plasma-assisted metal organic chemical vapor deposition(MOCVD) on c-sapphire and are measured by XPS. The results show that comparing with O1s and Zn2p, Zn3d has more obvious chemical displacement which can help us study the characteristics of ZnO film more effectively. The binding energy of Zn3d electron becomes larger along with the strengthening of coupling between Zn3d or Zn3d+Zn4s and O2p. The temperature of DEZn is an important factor which affects the formation of covalent bond between Zn and O atoms.

Key words: ZnO films, XPS, Valence band spectrum

CLC Number: 

TrendMD: