Chem. J. Chinese Universities ›› 1982, Vol. 3 ›› Issue (2): 224.

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ON THE ELECTRONIC BAND STRUCTURE OF BINARY SEMICONDUCTORS

Zhao shen, Zhao Yuan   

  1. Department of Technical Physics, Peking University, Beijing
  • Received:1980-12-31 Online:1982-04-24 Published:1982-04-24

Abstract: The band structures of ten semiconductors of A,ABand AB2 types have been calculated by LCBO MO method. The results showed that the band gaps Eg can generally be expressed as a linear function of the bond energy and the resonance integrals between the neighbouring bonds, irrespective of the covalent structural types of the semiconductors. This provides a theoretical background for the empirical expressions between Eg and some properties of the chemical bonds reported in the literature.

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