Abstract: The relationship between the Si-Hstretching vibration and the electronic steric effect of substituents on Si atom was studied for 19 mono-hydrosilanes (9 cyclic and 10 open chain mono-hydrosilanes).The results show that, (1) The Si-Hstretching vibration frequency is directly proportional to electronic withdrawing ability of substitucnis on Si atom in monohydrosilanes studied.Two excellent linear relationships between the Si-Hstretching vibration frequencies and Hammett substituent constants are obtained.(2) Two excellent linear relationships between the Si-Hstretching vibration frequencies and Taft substituent constants in mono-hydrosilanes are also found.(3) Areasonable mell cd of studying he electronic, steric effect of substituents on Si atcrr.s among the cyclic monohydro-tsilanes is proposed.